IRFZ44N,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Transistor Element Material :

SILICON

Series :

TrenchMOS™

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 1mA

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

110W Tc

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Avalanche Energy Rating (Eas) :

110 mJ

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Reach Compliance Code :

Unknown

Drain Current-Max (Abs) (ID) :

49A

Number of Elements :

1

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.022Ohm

Published :

1999

Drain to Source Voltage (Vdss) :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

160A

Additional Feature :

ESD PROTECTED

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Terminal Position :

Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Surface Mount :

No

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

49A Tc

DS Breakdown Voltage-Min :

55V