IRFZ44ESTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

60V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

220 mJ

JESD-30 Code :

R-PSSO-G2

Series :

HEXFET®

Published :

1997

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Drain Current-Max (Abs) (ID) :

48A

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

FET Type :

N-Channel

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Number of Elements :

1

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Drain-source On Resistance-Max :

0.023Ohm

Terminal Position :

Single

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Power Dissipation-Max :

110W Tc

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

192A

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Qualification Status :

Not Qualified