IRFZ44ESTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

48A

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Series :

HEXFET®

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

220 mJ

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Voltage - Rated DC :

60V

Number of Elements :

1

Drain-source On Resistance-Max :

0.023Ohm

Rise Time :

60ns

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Lead Free :

Contains Lead

Published :

1997

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

48A

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

192A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Terminal Form :

Gull wing

Power Dissipation-Max :

110W Tc

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Terminal Position :

Single

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Case Connection :

DRAIN