IRFZ44EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

48A

Qualification Status :

Not Qualified

Voltage - Rated DC :

60V

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

4 V

Resistance :

23mOhm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Packaging :

Tube

Transistor Element Material :

SILICON

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

250

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

4.69mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Length :

10.5156mm

Number of Terminations :

3

Height :

8.77mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

70 ns

Mounting Type :

Through Hole

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Rise Time :

60ns

JESD-609 Code :

e3

Termination :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Lead Pitch :

2.54mm

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Published :

1999

Threshold Voltage :

4V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

220 mJ

Continuous Drain Current (ID) :

48A

Power Dissipation :

110W

REACH SVHC :

No SVHC

Turn On Delay Time :

12 ns

Number of Pins :

3

Dual Supply Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Mount :

Through Hole

Power Dissipation-Max :

110W Tc

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

60V

Series :

HEXFET®

Lead Free :

Lead Free