IRFZ44EL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1997

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

DS Breakdown Voltage-Min :

60V

Power Dissipation-Max :

110W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.023Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Transistor Element Material :

SILICON

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

192A

Drain Current-Max (Abs) (ID) :

48A

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Avalanche Energy Rating (Eas) :

220 mJ

Case Connection :

DRAIN

Number of Terminations :

3

Operating Temperature :

-55°C~175°C TJ