IRFZ44E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

23m Ω @ 29A, 10V

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Transistor Element Material :

SILICON

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Pulsed Drain Current-Max (IDM) :

192A

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Packaging :

Tube

Power Dissipation-Max :

110W Tc

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.023Ohm

Drain Current-Max (Abs) (ID) :

48A

Number of Elements :

1

Avalanche Energy Rating (Eas) :

220 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1360pF @ 25V

Package / Case :

TO-220-3

Published :

1999

DS Breakdown Voltage-Min :

60V

Additional Feature :

AVALANCHE RATED

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Surface Mount :

No

Case Connection :

DRAIN