IRFZ40PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Threshold Voltage :

4V

Number of Pins :

3

Width :

4.7mm

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

200A

Drain-source On Resistance-Max :

0.028Ohm

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

FET Type :

N-Channel

Weight :

6.000006g

Published :

2011

Continuous Drain Current (ID) :

35A

Length :

10.41mm

Terminal Finish :

Matte Tin (Sn)

Rise Time :

25ns

JESD-609 Code :

e3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Power Dissipation :

126W

Current - Continuous Drain (Id) @ 25°C :

50A Tc

REACH SVHC :

Unknown

Power Dissipation-Max :

150W Tc

Mount :

Through Hole

Case Connection :

DRAIN

Number of Channels :

1

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

15 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

28m Ω @ 31A, 10V

Transistor Application :

SWITCHING

Pin Count :

3

DS Breakdown Voltage-Min :

60V

Number of Terminations :

3

Height :

9.01mm

Drain to Source Voltage (Vdss) :

60V

Drain Current-Max (Abs) (ID) :

50A

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

35 ns

Number of Elements :

1

Pbfree Code :

yes

Packaging :

Tube

Package / Case :

TO-220-3

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON