IRFZ40

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±20V

Number of Channels :

1

Drain to Source Voltage (Vdss) :

60V

Pbfree Code :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Turn-Off Delay Time :

35 ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Power Dissipation-Max :

150W Tc

Width :

4.7mm

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Fall Time (Typ) :

12 ns

Length :

10.41mm

Turn On Delay Time :

15 ns

Power Dissipation :

126W

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

200A

Number of Pins :

3

Rise Time :

25ns

Transistor Element Material :

SILICON

Height :

9.01mm

FET Type :

N-Channel

Element Configuration :

Single

Weight :

6.000006g

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Package / Case :

TO-220-3

JESD-609 Code :

e0

Number of Terminations :

3

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

35A

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Terminal Finish :

TIN LEAD

Drain-source On Resistance-Max :

0.028Ohm

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

50A

Rds On (Max) @ Id, Vgs :

28m Ω @ 31A, 10V

Operating Temperature :

-55°C~175°C TJ

Published :

2011

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole