IRFZ34STRLPBF
- Mfr.Part #
- IRFZ34STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A D2PAK
- Stock
- 45
- In Stock :
- 45
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 18A, 10V
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 100ns
- Supplier Device Package :
- D2PAK
- Rds On Max :
- 50 mΩ
- Continuous Drain Current (ID) :
- 30A
- Drain to Source Voltage (Vdss) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 50mOhm
- Fall Time (Typ) :
- 52 ns
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Mount :
- Surface Mount
- Input Capacitance :
- 1.2nF
- Factory Lead Time :
- 11 Weeks
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Turn-Off Delay Time :
- 29 ns
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Published :
- 2012
- FET Type :
- N-Channel
- Min Operating Temperature :
- -55°C
- Datasheets
- IRFZ34STRLPBF
N-Channel Tape & Reel (TR) 50mOhm @ 18A, 10V ±20V 1200pF @ 25V 46nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ34STRLPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1200pF @ 25V.This device conducts a continuous drain current (ID) of 30A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 29 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 50MOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 13 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 60V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRFZ34STRLPBF Features
a continuous drain current (ID) of 30A
the turn-off delay time is 29 ns
single MOSFETs transistor is 50MOhm
a 60V drain to source voltage (Vdss)
IRFZ34STRLPBF Applications
There are a lot of Vishay Siliconix
IRFZ34STRLPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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