IRFZ34NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.04Ohm

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

55V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

100A

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Drain to Source Voltage (Vdss) :

55V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Terminal Form :

Gull wing

Published :

1997

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

FET Type :

N-Channel

Series :

HEXFET®

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

29A

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

130 mJ

Power Dissipation-Max :

3.8W Ta 68W Tc

Surface Mount :

yes