IRFZ34NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

4.826mm

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

86 ns

Voltage - Rated DC :

55V

Fall Time (Typ) :

40 ns

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Factory Lead Time :

12 Weeks

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Case Connection :

DRAIN

Series :

HEXFET®

Lead Free :

Contains Lead, Lead Free

Resistance :

40mOhm

Rise Time :

49ns

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Terminal Form :

Gull wing

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.8W Ta 68W Tc

Dual Supply Voltage :

55V

Turn-Off Delay Time :

31 ns

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Type :

N-Channel

Continuous Drain Current (ID) :

29A

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Turn On Delay Time :

7 ns

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Vgs (Max) :

±20V

Length :

10.668mm

ECCN Code :

EAR99

Current Rating :

29A

Power Dissipation :

68W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

55V