IRFZ34NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.8W Ta 68W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Terminal Position :

Single

Published :

1997

Drain Current-Max (Abs) (ID) :

29A

Drain to Source Voltage (Vdss) :

55V

Avalanche Energy Rating (Eas) :

130 mJ

Packaging :

Tube

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain-source On Resistance-Max :

0.04Ohm

DS Breakdown Voltage-Min :

55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

100A

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Surface Mount :

yes

Transistor Element Material :

SILICON