IRFZ34NSPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Peak Reflow Temperature (Cel) :

260

Published :

1997

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 68W Tc

Avalanche Energy Rating (Eas) :

130 mJ

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

100A

Drain Current-Max (Abs) (ID) :

29A

DS Breakdown Voltage-Min :

55V

Drain-source On Resistance-Max :

0.04Ohm

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Terminal Position :

Single

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel