IRFZ34NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

55V

Packaging :

Tube

Fall Time (Typ) :

40 ns

Radiation Hardening :

No

Number of Terminations :

3

Height :

15.24mm

Operating Mode :

ENHANCEMENT MODE

Dual Supply Voltage :

55V

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Termination :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Pitch :

2.54mm

Nominal Vgs :

4 V

Series :

HEXFET®

Max Junction Temperature (Tj) :

175°C

Power Dissipation-Max :

68W Tc

Number of Pins :

3

Transistor Element Material :

SILICON

Voltage - Rated DC :

55V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Contact Plating :

Tin

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Width :

4.69mm

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Rds On (Max) @ Id, Vgs :

40m Ω @ 16A, 10V

Resistance :

40mOhm

Published :

1997

Power Dissipation :

56W

Avalanche Energy Rating (Eas) :

65 mJ

Recovery Time :

86 ns

FET Type :

N-Channel

Package / Case :

TO-220-3

Factory Lead Time :

12 Weeks

Element Configuration :

Single

Mounting Type :

Through Hole

Current Rating :

29A

Length :

10.5156mm

Turn-Off Delay Time :

31 ns

Continuous Drain Current (ID) :

29A

Mount :

Through Hole

ECCN Code :

EAR99

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Rise Time :

49ns