IRFZ34NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Published :

1997

Fall Time (Typ) :

40 ns

Series :

HEXFET®

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Number of Elements :

1

Rds On Max :

40 mΩ

FET Type :

N-Channel

Drain to Source Resistance :

40mOhm

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

3.8W Ta 68W Tc

Rise Time :

49ns

Continuous Drain Current (ID) :

29A

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

29A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±20V

Turn-Off Delay Time :

31 ns

Resistance :

40mOhm

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Supplier Device Package :

TO-262

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain to Source Voltage (Vdss) :

55V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

55V

Current Rating :

29A

Min Operating Temperature :

-55°C

Mounting Type :

Through Hole

Drain to Source Breakdown Voltage :

55V

Input Capacitance :

700pF

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7 ns

Rds On (Max) @ Id, Vgs :

40mOhm @ 16A, 10V

Max Operating Temperature :

175°C

Power Dissipation :

68W