IRFZ34EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Length :

10.5156mm

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

28A

Number of Pins :

3

Threshold Voltage :

4V

Rise Time :

30ns

Termination :

Through Hole

Mount :

Through Hole

Drain to Source Breakdown Voltage :

60V

Height :

8.77mm

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Dual Supply Voltage :

60V

Lead Free :

Lead Free

Fall Time (Typ) :

30 ns

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

5.1 ns

Resistance :

42mOhm

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Rds On (Max) @ Id, Vgs :

42m Ω @ 17A, 10V

Current Rating :

28A

Power Dissipation :

68W

Lead Pitch :

2.54mm

Turn On Delay Time :

5.1 ns

Width :

4.69mm

Power Dissipation-Max :

68W Tc

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

Nominal Vgs :

4 V

Published :

2003

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Element Configuration :

Single

Series :

HEXFET®

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Packaging :

Tube

Vgs (Max) :

±20V