IRFZ34E

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Input Capacitance (Ciss) (Max) @ Vds :

680pF @ 25V

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

60V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Number of Terminations :

3

Number of Elements :

1

Package / Case :

TO-220-3

Series :

HEXFET®

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

28A

Terminal Position :

Single

Drain-source On Resistance-Max :

0.042Ohm

Qualification Status :

Not Qualified

Power Dissipation-Max :

68W Tc

Avalanche Energy Rating (Eas) :

65 mJ

FET Type :

N-Channel

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

No

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

100A

DS Breakdown Voltage-Min :

60V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

42m Ω @ 17A, 10V

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Published :

1997

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE