IRFZ34
- Mfr.Part #
- IRFZ34
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 30A TO220AB
- Stock
- 8,904
- In Stock :
- 8,904
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.41mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Resistance :
- 50mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 25V
- Supplier Device Package :
- TO-220AB
- Published :
- 2016
- Rds On (Max) @ Id, Vgs :
- 50mOhm @ 18A, 10V
- Width :
- 4.7mm
- Fall Time (Typ) :
- 52 ns
- Height :
- 9.01mm
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 100ns
- Turn-Off Delay Time :
- 29 ns
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Resistance :
- 50mOhm
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 30A
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 60V
- Input Capacitance :
- 1.2nF
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 88W Tc
- Packaging :
- Tube
- Turn On Delay Time :
- 13 ns
- Mount :
- Through Hole
- Rds On Max :
- 50 mΩ
- Lead Free :
- Contains Lead
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Channels :
- 1
- Weight :
- 6.000006g
- Datasheets
- IRFZ34
N-Channel Tube 50mOhm @ 18A, 10V ±20V 1200pF @ 25V 46nC @ 10V 60V TO-220-3
IRFZ34 Overview
A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 30A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 29 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 50mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRFZ34 Features
a continuous drain current (ID) of 30A
the turn-off delay time is 29 ns
single MOSFETs transistor is 50mOhm
a 60V drain to source voltage (Vdss)
IRFZ34 Applications
There are a lot of Vishay Siliconix
IRFZ34 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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