IRFZ30

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Mfr.Part #
IRFZ30
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 50V 30A TO220AB
Stock
22,510
In Stock :
22,510

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Input Capacitance :
1.6nF
Weight :
6.000006g
Max Operating Temperature :
150°C
Input Capacitance (Ciss) (Max) @ Vds :
1600pF @ 25V
Turn-Off Delay Time :
23 ns
Drain to Source Voltage (Vdss) :
50V
Supplier Device Package :
TO-220AB
Rds On (Max) @ Id, Vgs :
50mOhm @ 16A, 10V
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
RoHS Status :
Non-RoHS Compliant
Gate to Source Voltage (Vgs) :
20V
Number of Channels :
1
Rise Time :
16ns
Power Dissipation-Max :
74W Tc
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Length :
10.41mm
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Element Configuration :
Single
FET Type :
N-Channel
Width :
4.7mm
Packaging :
Tube
Fall Time (Typ) :
16 ns
Drain to Source Resistance :
45mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Pins :
3
Package / Case :
TO-220-3
Drain to Source Breakdown Voltage :
50V
Turn On Delay Time :
12 ns
Mount :
Through Hole
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Height :
9.01mm
Radiation Hardening :
No
Published :
2000
Min Operating Temperature :
-55°C
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
30A
Rds On Max :
50 mΩ
Datasheets
IRFZ30
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFZ30 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Channels:1, Number of Pins:3, Package / Case:TO-220-3, IRFZ30 pinout, IRFZ30 datasheet PDF, IRFZ30 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFZ30 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFZ30


N-Channel Tube 50mOhm @ 16A, 10V ±20V 1600pF @ 25V 30nC @ 10V 50V TO-220-3

IRFZ30 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1600pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=50V. And this device has 50V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 23 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 45mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 50V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRFZ30 Features


a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 50V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 45mOhm
a 50V drain to source voltage (Vdss)


IRFZ30 Applications


There are a lot of Vishay Siliconix
IRFZ30 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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