IRFZ24STRRPBF
- Mfr.Part #
- IRFZ24STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A TO263
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 25 ns
- Configuration :
- Single
- Pin Count :
- 4
- DS Breakdown Voltage-Min :
- 60V
- Continuous Drain Current (ID) :
- 17A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 68A
- JESD-30 Code :
- R-PSSO-G2
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 13 ns
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 58ns
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Published :
- 2013
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 42 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.1Ohm
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 60V
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 10A, 10V
- Datasheets
- IRFZ24STRRPBF

N-Channel Tape & Reel (TR) 100m Ω @ 10A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24STRRPBF Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 640pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.It is [25 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 68A.A turn-on delay time of 13 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFZ24STRRPBF Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 25 ns
based on its rated peak drain current 68A.
a 60V drain to source voltage (Vdss)
IRFZ24STRRPBF Applications
There are a lot of Vishay Siliconix
IRFZ24STRRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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