IRFZ24STRR
- Mfr.Part #
- IRFZ24STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A D2PAK
- Stock
- 4,575
- In Stock :
- 4,575
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Reach Compliance Code :
- Unknown
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Pulsed Drain Current-Max (IDM) :
- 68A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Pin Count :
- 4
- Mounting Type :
- Surface Mount
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 2
- Qualification Status :
- Not Qualified
- Case Connection :
- DRAIN
- Drain to Source Voltage (Vdss) :
- 60V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 17A
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~175°C TJ
- Drain-source On Resistance-Max :
- 0.1Ohm
- Published :
- 1997
- HTS Code :
- 8541.29.00.95
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 60V
- Terminal Position :
- Single
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 10A, 10V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSSO-G2
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Datasheets
- IRFZ24STRR
N-Channel Tape & Reel (TR) 100m Ω @ 10A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24STRR Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 100 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 640pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 17A amps.As far as peak drain current is concerned, its maximum pulsed current is 68A.The DS breakdown voltage should be maintained above 60V to maintain normal operation.To operate this transistor, you will need a 60V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IRFZ24STRR Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 17A
based on its rated peak drain current 68A.
a 60V drain to source voltage (Vdss)
IRFZ24STRR Applications
There are a lot of Vishay Siliconix
IRFZ24STRR applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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