IRFZ24STRLPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2016

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Factory Lead Time :

11 Weeks

Power Dissipation-Max :

3.7W Ta 60W Tc

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.1Ohm

Continuous Drain Current (ID) :

17A

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

13 ns

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Turn-Off Delay Time :

25 ns

HTS Code :

8541.29.00.95

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Terminal Position :

Single

Number of Elements :

1

Fall Time (Typ) :

42 ns

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

100 mJ

Pulsed Drain Current-Max (IDM) :

68A

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Number of Pins :

3

Configuration :

Single

Rise Time :

58ns

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

60V

FET Type :

N-Channel

Pin Count :

4

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V