IRFZ24STRL
- Mfr.Part #
- IRFZ24STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 17A D2PAK
- Stock
- 2,993
- In Stock :
- 2,993
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.1Ohm
- Continuous Drain Current (ID) :
- 17A
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Pbfree Code :
- yes
- Factory Lead Time :
- 11 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 17A Tc
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 10A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 13 ns
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Rise Time :
- 58ns
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 60V
- DS Breakdown Voltage-Min :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 2
- Number of Pins :
- 3
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Transistor Application :
- SWITCHING
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Published :
- 2016
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 25 ns
- Fall Time (Typ) :
- 42 ns
- Pin Count :
- 4
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.95
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pulsed Drain Current-Max (IDM) :
- 68A
- Datasheets
- IRFZ24STRL
N-Channel Tape & Reel (TR) 100m Ω @ 10A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRFZ24STRLPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 100 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 640pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 68A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 60V, it should remain above the 60V level.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRFZ24STRLPBF Features
the avalanche energy rating (Eas) is 100 mJ
a continuous drain current (ID) of 17A
the turn-off delay time is 25 ns
based on its rated peak drain current 68A.
a 60V drain to source voltage (Vdss)
IRFZ24STRLPBF Applications
There are a lot of Vishay Siliconix
IRFZ24STRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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