IRFZ24SPBF

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Mfr.Part #
IRFZ24SPBF
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 17A TO263
Stock
12,408
In Stock :
12,408

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2016
Current - Continuous Drain (Id) @ 25°C :
17A Tc
Power Dissipation-Max :
3.7W Ta 60W Tc
Drain to Source Voltage (Vdss) :
60V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Factory Lead Time :
8 Weeks
Operating Temperature :
-55°C~175°C TJ
Packaging :
Tube
Mounting Type :
Surface Mount
Radiation Hardening :
No
Vgs (Max) :
±20V
Rds On Max :
100 mΩ
Drain to Source Breakdown Voltage :
60V
Continuous Drain Current (ID) :
17A
FET Type :
N-Channel
Drain to Source Resistance :
100MOhm
Min Operating Temperature :
-55°C
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Input Capacitance :
640pF
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Turn On Delay Time :
13 ns
Rise Time :
58ns
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Turn-Off Delay Time :
25 ns
Rds On (Max) @ Id, Vgs :
100mOhm @ 10A, 10V
Mount :
Surface Mount
Max Operating Temperature :
175°C
Input Capacitance (Ciss) (Max) @ Vds :
640pF @ 25V
Supplier Device Package :
TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Number of Pins :
3
Fall Time (Typ) :
42 ns
Datasheets
IRFZ24SPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRFZ24SPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Channels:1, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, IRFZ24SPBF pinout, IRFZ24SPBF datasheet PDF, IRFZ24SPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRFZ24SPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRFZ24SPBF


N-Channel Tube 100mOhm @ 10A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFZ24SPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 640pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 25 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 100mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFZ24SPBF Features


a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
single MOSFETs transistor is 100mOhm
a 60V drain to source voltage (Vdss)


IRFZ24SPBF Applications


There are a lot of Vishay Siliconix
IRFZ24SPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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