IRFZ24PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4V

Fall Time (Typ) :

42 ns

Power Dissipation :

60W

Peak Reflow Temperature (Cel) :

260

Height :

9.01mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

100m Ω @ 10A, 10V

Terminal Finish :

Matte Tin (Sn)

Turn-Off Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Resistance :

100MOhm

Number of Elements :

1

Turn On Delay Time :

13 ns

Drain to Source Breakdown Voltage :

60V

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

17A

Width :

4.7mm

Lead Free :

Lead Free

Rise Time :

58ns

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Power Dissipation-Max :

60W Tc

REACH SVHC :

Unknown

Number of Channels :

1

Packaging :

Tube

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Published :

2011

Number of Pins :

3

Package / Case :

TO-220-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

6.000006g

ECCN Code :

EAR99

Length :

10.41mm

Mounting Type :

Through Hole

Mount :

Through Hole

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

68A

Element Configuration :

Single

Factory Lead Time :

8 Weeks

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3