IRFZ24NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 45W Tc

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Voltage - Rated DC :

55V

Continuous Drain Current (ID) :

17A

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Published :

2004

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Drain to Source Resistance :

70mOhm

Rise Time :

34ns

Drain to Source Voltage (Vdss) :

55V

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

27 ns

Number of Elements :

1

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

45W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

175°C

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Supplier Device Package :

D2PAK

Turn On Delay Time :

4.9 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

19 ns

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

55V

Input Capacitance :

370pF

Rds On (Max) @ Id, Vgs :

70mOhm @ 10A, 10V

Current Rating :

17A

Lead Free :

Lead Free

Height :

4.699mm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Length :

10.668mm

Rds On Max :

70 mΩ