IRFZ24NSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

71 mJ

Drain Current-Max (Abs) (ID) :

17A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

3.8W Ta 45W Tc

DS Breakdown Voltage-Min :

55V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G2

Vgs (Max) :

±20V

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Pulsed Drain Current-Max (IDM) :

68A

Terminal Form :

Gull wing

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Terminal Finish :

MATTE TIN OVER NICKEL

Surface Mount :

yes

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Drain-source On Resistance-Max :

0.07Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Published :

1997

Number of Terminations :

2

Vgs(th) (Max) @ Id :

4V @ 250µA