IRFZ24NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

3.8W Ta 45W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Case Connection :

DRAIN

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PDSO-G2

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drain-source On Resistance-Max :

0.07Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

55V

Drain Current-Max (Abs) (ID) :

17A

Avalanche Energy Rating (Eas) :

71 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

68A

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Terminal Position :

Dual

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

Gull wing

Published :

1997

FET Type :

N-Channel

Transistor Application :

SWITCHING