IRFZ24NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Length :

10.5156mm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Lead Pitch :

2.54mm

Resistance :

70mOhm

Element Configuration :

Single

FET Type :

N-Channel

Series :

HEXFET®

Termination :

Through Hole

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Voltage - Rated DC :

55V

Turn-Off Delay Time :

19 ns

Threshold Voltage :

2V

Drain to Source Breakdown Voltage :

55V

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

68A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

45W Tc

Nominal Vgs :

4 V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Lead Free :

Lead Free

Power Dissipation :

45W

Rise Time :

34ns

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.69mm

Contact Plating :

Tin

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

17A

Number of Pins :

3

Current Rating :

17A

Published :

1999

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

19.8mm

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Fall Time (Typ) :

27 ns

Max Junction Temperature (Tj) :

175°C

Vgs (Max) :

±20V

Dual Supply Voltage :

55V

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

4.9 ns

Packaging :

Tube

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V