IRFZ24NL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

55V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Pulsed Drain Current-Max (IDM) :

68A

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Terminal Position :

Single

Drain-source On Resistance-Max :

0.07Ohm

Series :

HEXFET®

Transistor Application :

SWITCHING

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Drain Current-Max (Abs) (ID) :

17A

Drain to Source Voltage (Vdss) :

55V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

71 mJ

Power Dissipation-Max :

3.8W Ta 45W Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Surface Mount :

No

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

JESD-609 Code :

e3