IRFIZ48NPBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

36A

Published :

1996

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Nominal Vgs :

4 V

Input Capacitance (Ciss) (Max) @ Vds :

1900pF @ 25V

Rise Time :

78ns

Length :

10.6172mm

Recovery Time :

140 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Height :

9.8mm

Packaging :

Tube

Power Dissipation :

42W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Radiation Hardening :

No

Factory Lead Time :

14 Weeks

Vgs (Max) :

±20V

JESD-609 Code :

e3

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Number of Pins :

3

Continuous Drain Current (ID) :

36A

REACH SVHC :

No SVHC

Avalanche Energy Rating (Eas) :

270 mJ

FET Type :

N-Channel

Case Connection :

Isolated

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Fall Time (Typ) :

48 ns

Voltage - Rated DC :

55V

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

40A

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

54W Tc

Series :

HEXFET®

Mount :

Through Hole

Turn-Off Delay Time :

32 ns

Rds On (Max) @ Id, Vgs :

16m Ω @ 22A, 10V

Width :

4.826mm