IRFF232

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Terminal Position :

BOTTOM

Manufacturer :

Rochester Electronics LLC

Pulsed Drain Current-Max (IDM) :

18 A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

JESD-30 Code :

O-MBCY-W3

JEDEC-95 Code :

TO-205AF

Product Status :

Active

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On, Min Rds On) :

-

Package :

Bulk

FET Type :

N-Channel

Package Shape :

Round

Drain to Source Voltage (Vdss) :

200 V

Number of Elements :

1

JESD-609 Code :

e0

Pbfree Code :

No

Package / Case :

TO-205AF Metal Can

Vgs(th) (Max) @ Id :

-

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

Mounting Type :

Through Hole

Polarity/Channel Type :

N-Channel

Operating Temperature :

-

Vgs (Max) :

-

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

FET Feature :

-

Case Connection :

DRAIN

Terminal Form :

Wire

Supplier Device Package :

TO-205AF (TO-39)

Terminal Finish :

TIN LEAD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

25W

Drain-source On Resistance-Max :

0.6 Ω

Number of Terminals :

3

Rds On (Max) @ Id, Vgs :

-

DS Breakdown Voltage-Min :

200 V