IRFF232

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200 V

Drain-source On Resistance-Max :

0.6 Ω

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

4.5A (Tc)

DS Breakdown Voltage-Min :

200 V

JEDEC-95 Code :

TO-205AF

Polarity/Channel Type :

N-Channel

Manufacturer :

Rochester Electronics LLC

Case Connection :

DRAIN

Package / Case :

TO-205AF Metal Can

Series :

-

Package :

Bulk

JESD-609 Code :

e0

Transistor Element Material :

SILICON

FET Feature :

-

Vgs (Max) :

-

Terminal Form :

Wire

Transistor Application :

SWITCHING

Qualification Status :

COMMERCIAL

Package Shape :

Round

FET Type :

N-Channel

Surface Mount :

No

JESD-30 Code :

O-MBCY-W3

Terminal Finish :

TIN LEAD

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On, Min Rds On) :

-

Pulsed Drain Current-Max (IDM) :

18 A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

-

Power Dissipation (Max) :

25W

Vgs(th) (Max) @ Id :

-

Operating Temperature :

-

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

3

Supplier Device Package :

TO-205AF (TO-39)

Terminal Position :

BOTTOM

Pbfree Code :

No

Product Status :

Active