IRFF131

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

JEDEC-95 Code :

TO-205AF

Package :

Bulk

Drain-source On Resistance-Max :

0.18 Ω

Configuration :

Single

JESD-30 Code :

O-MBCY-W3

Qualification Status :

COMMERCIAL

Terminal Form :

Wire

Product Status :

Active

Reach Compliance Code :

Unknown

Number of Elements :

1

Vgs(th) (Max) @ Id :

-

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

80 V

Mounting Type :

Through Hole

RoHS :

Compliant

Drain to Source Resistance :

180 mΩ

Series :

-

Transistor Element Material :

SILICON

Polarity/Channel Type :

N-Channel

Operating Temperature :

-

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-205AF (TO-39)

Power Dissipation (Max) :

-

Technology :

MOSFET (Metal Oxide)

Pulsed Drain Current-Max (IDM) :

32 A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package Shape :

Round

Package / Case :

TO-205AF Metal Can

Terminal Position :

BOTTOM

FET Feature :

-

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

DS Breakdown Voltage-Min :

80 V

Vgs (Max) :

-

Manufacturer :

Rochester Electronics LLC

Rds On (Max) @ Id, Vgs :

-

Number of Terminals :

3