IRFF211

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Wire

DS Breakdown Voltage-Min :

150 V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

JEDEC-95 Code :

TO-205AF

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Power Dissipation (Max) :

15W (Tc)

Pulsed Drain Current-Max (IDM) :

9 A

FET Type :

N-Channel

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Manufacturer :

Rochester Electronics LLC

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.25A, 10V

JESD-30 Code :

O-MBCY-W3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Feature :

-

JESD-609 Code :

e0

Supplier Device Package :

TO-205AF (TO-39)

Terminal Position :

BOTTOM

Drain to Source Voltage (Vdss) :

150 V

Reach Compliance Code :

Unknown

Terminal Finish :

TIN LEAD

Package / Case :

TO-205AF Metal Can

Case Connection :

DRAIN

Package :

Bulk

Series :

-

Polarity/Channel Type :

N-Channel

Number of Terminals :

3

Pbfree Code :

No

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package Shape :

Round

Product Status :

Active

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Drain-source On Resistance-Max :

1.5 Ω