IRFF211

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Feature :

-

Pbfree Code :

No

Package / Case :

TO-205AF Metal Can

DS Breakdown Voltage-Min :

150 V

Terminal Position :

BOTTOM

Qualification Status :

COMMERCIAL

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Terminal Form :

Wire

Manufacturer :

Rochester Electronics LLC

JEDEC-95 Code :

TO-205AF

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

2.2A (Tc)

Number of Elements :

1

Power Dissipation (Max) :

15W (Tc)

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

JESD-30 Code :

O-MBCY-W3

Vgs (Max) :

±20V

Package :

Bulk

Transistor Application :

SWITCHING

Number of Terminals :

3

Pulsed Drain Current-Max (IDM) :

9 A

Operating Mode :

ENHANCEMENT MODE

Product Status :

Active

Operating Temperature :

-55°C ~ 150°C (TJ)

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 1.25A, 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

1.5 Ω

Drain to Source Voltage (Vdss) :

150 V

Mounting Type :

Through Hole

JESD-609 Code :

e0

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Case Connection :

DRAIN

Drive Voltage (Max Rds On, Min Rds On) :

10V

Series :

-

Package Shape :

Round

Supplier Device Package :

TO-205AF (TO-39)

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

Terminal Finish :

TIN LEAD