IRFF111

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Operating Temperature :

-55°C ~ 150°C (TJ)

Case Connection :

DRAIN

Transistor Element Material :

SILICON

JESD-30 Code :

O-MBCY-W3

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

80 V

Pbfree Code :

No

Manufacturer :

Rochester Electronics LLC

Vgs (Max) :

±20V

Terminal Form :

Wire

Supplier Device Package :

TO-205AF (TO-39)

JEDEC-95 Code :

TO-205AF

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

14 A

Package Shape :

Round

Surface Mount :

No

Terminal Position :

BOTTOM

Rds On (Max) @ Id, Vgs :

600mOhm @ 1.5A, 10V

Package / Case :

TO-205AF Metal Can

Terminal Finish :

TIN LEAD

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.6 Ω

FET Type :

N-Channel

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

3.5A (Tc)

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7.5 nC @ 10 V

Number of Terminals :

3

Product Status :

Active

JESD-609 Code :

e0

Series :

-

FET Feature :

-

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

RoHS :

Non-Compliant

Power Dissipation (Max) :

15W (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

Polarity/Channel Type :

N-Channel

DS Breakdown Voltage-Min :

80 V

Package :

Bulk