IPU13N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.0128Ohm

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

8.3nC @ 5V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

1043pF @ 15V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

2V @ 20μA

Packaging :

Tube

Transistor Element Material :

SILICON

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

210A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

30A Tc

JESD-609 Code :

e3

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Surface Mount :

No

Series :

OptiMOS™

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

30A

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

60 mJ

DS Breakdown Voltage-Min :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

25V

Rds On (Max) @ Id, Vgs :

12.8m Ω @ 30A, 10V

Power Dissipation-Max :

46W Tc