IPU10N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

MATTE TIN

Power Dissipation-Max :

52W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Packaging :

Tube

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

80 mJ

Mounting Type :

Through Hole

Terminal Position :

Single

Number of Elements :

1

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Drain-source On Resistance-Max :

0.0104Ohm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 20μA

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

25V

Series :

OptiMOS™

Transistor Element Material :

SILICON

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Compliant

Pulsed Drain Current-Max (IDM) :

210A

DS Breakdown Voltage-Min :

25V

Surface Mount :

No

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

30A