IPU10N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Current Rating :

30A

Pulsed Drain Current-Max (IDM) :

210A

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Type :

N-Channel

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

10.4m Ω @ 30A, 10V

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

30A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Position :

Single

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 5V

Drain-source On Resistance-Max :

0.0104Ohm

Number of Terminations :

3

Published :

2008

Avalanche Energy Rating (Eas) :

80 mJ

Voltage - Rated DC :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-30 Code :

R-PSIP-T3

Continuous Drain Current (ID) :

30A

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

52W Tc

Series :

OptiMOS™

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2V @ 20μA

Mount :

Through Hole

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1358pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1