IPU105N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

OptiMOS™

Qualification Status :

Not Qualified

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Finish :

MATTE TIN

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 30A, 10V

Peak Reflow Temperature (Cel) :

260

HTS Code :

8541.29.00.95

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

245A

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

30 mJ

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Power Dissipation-Max :

38W Tc

Terminal Position :

Single

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

35A

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0105Ohm

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

30V

Case Connection :

DRAIN

Published :

2008

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Number of Terminations :

3

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 15V

JESD-30 Code :

R-PSIP-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

30V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pin Count :

3