IPP80R900P7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Terminal Position :

Single

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

45W Tc

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.9Ohm

Factory Lead Time :

18 Weeks

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

14A

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Series :

CoolMOS™ P7

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

No

FET Type :

N-Channel

Packaging :

Tube

Package / Case :

TO-220-3

Number of Elements :

1

Avalanche Energy Rating (Eas) :

13 mJ

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING