IPP80N04S2H4AKSA2
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- Mfr.Part #
- IPP80N04S2H4AKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A TO220-3
- Stock
- 39,849
- In Stock ：
- 39,849
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 80A
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 80A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Series :
- OptiMOS™
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 3
- Power Dissipation-Max :
- 300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4400pF @ 25V
- Drain-source On Resistance-Max :
- 0.004ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 148nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Operating Temperature :
- -55°C~175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- JESD-30 Code :
- R-PSFM-T3
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- DS Breakdown Voltage-Min :
- 40V
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 660 mJ
- Pulsed Drain Current-Max (IDM) :
- 320A
- Drain to Source Voltage (Vdss) :
- 40V
- Datasheets
- IPP80N04S2H4AKSA2
N-Channel Tube 4m Ω @ 80A, 10V ±20V 4400pF @ 25V 148nC @ 10V 40V TO-220-3
IPP80N04S2H4AKSA2 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 660 mJ.The maximum input capacitance of this device is 4400pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 80A.There is no pulsed drain current maximum for this device based on its rated peak drain current 320A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IPP80N04S2H4AKSA2 Features
the avalanche energy rating (Eas) is 660 mJ
a continuous drain current (ID) of 80A
based on its rated peak drain current 320A.
a 40V drain to source voltage (Vdss)
IPP80N04S2H4AKSA2 Applications
There are a lot of Infineon Technologies
IPP80N04S2H4AKSA2 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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