IPP80CN10NGXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drain to Source Resistance :

61 mΩ

Power Dissipation :

31

RoHS :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

716 pF @ 50 V

Package :

Bulk

Technology :

MOSFET (Metal Oxide)

FET Feature :

-

Rise Time :

4 ns

Continuous Drain Current Id :

52

Rds On (Max) @ Id, Vgs :

80mOhm @ 13A, 10V

Continuous Drain Current (ID) :

13 A

Series :

OptiMOS™ 2

Channel Type :

N

Product Status :

Active

Current - Continuous Drain (Id) @ 25°C :

13A (Tc)

Gate Charge (Qg) (Max) @ Vgs :

11 nC @ 10 V

Number of Elements :

1

Operating Temperature :

-55°C ~ 175°C (TJ)

Height :

20.75 mm

Power Dissipation (Max) :

31W (Tc)

Drain to Source Voltage (Vdss) :

100 V

Turn-Off Delay Time :

13 ns

Min Operating Temperature :

-55 °C

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Max Operating Temperature :

175 °C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Mount :

Through Hole

Max Junction Temperature (Tj) :

175 °C

Number of Channels :

1

Vgs(th) (Max) @ Id :

4V @ 12µA

Turn-On Delay Time :

9 ns

Gate to Source Voltage (Vgs) :

20 V

Supplier Device Package :

PG-TO220-3-123

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100 V

Element Configuration :

Single