IPP80N04S403AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 53μA

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Published :

2010

Continuous Drain Current (ID) :

80A

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation :

94W

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Mounting Type :

Through Hole

Fall Time (Typ) :

16 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0037Ohm

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

5260pF @ 25V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 80A, 10V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

14 ns

Packaging :

Tube

Factory Lead Time :

16 Weeks

Terminal Position :

Single

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Halogen Free :

Halogen Free

Lead Free :

Contains Lead

Max Dual Supply Voltage :

40V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

94W Tc

Avalanche Energy Rating (Eas) :

200 mJ