IPP80R360P7XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

800V

Factory Lead Time :

18 Weeks

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2014

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.6A, 10V

Series :

CoolMOS™ P7

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Terminal Position :

Single

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Terminal Finish :

Tin (Sn)

Vgs(th) (Max) @ Id :

3.5V @ 280μA

Transistor Application :

SWITCHING

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 500V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.36ohm

Power Dissipation-Max :

84W Tc

Pulsed Drain Current-Max (IDM) :

34A

Avalanche Energy Rating (Eas) :

34 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V