IPP80P04P4L06AKSA1
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- Mfr.Part #
- IPP80P04P4L06AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 80A TO220-3
- Stock
- 30,387
- In Stock ：
- 30,387
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- -40V
- Published :
- 2011
- Input Capacitance (Ciss) (Max) @ Vds :
- 6580pF @ 25V
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Vgs (Max) :
- +5V, -16V
- Power Dissipation-Max :
- 88W Tc
- Length :
- 10mm
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 6.7mOhm @ 80A, 10V
- Drain to Source Resistance :
- 10.8mOhm
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Gate Charge (Qg) (Max) @ Vgs :
- 104nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn On Delay Time :
- 17 ns
- Max Operating Temperature :
- 175°C
- FET Type :
- P-Channel
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Contains Lead
- Height :
- 15.65mm
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Halogen Free :
- Halogen Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Voltage (Vdss) :
- 40V
- Turn-Off Delay Time :
- 61 ns
- Mounting Type :
- Through Hole
- Input Capacitance :
- 5.06nF
- Mount :
- Through Hole
- Rise Time :
- 12ns
- Gate to Source Voltage (Vgs) :
- 16V
- Rds On Max :
- 6.7 mΩ
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Factory Lead Time :
- 14 Weeks
- Vgs(th) (Max) @ Id :
- 2.2V @ 150µA
- Width :
- 4.4mm
- Fall Time (Typ) :
- 44 ns
- Supplier Device Package :
- PG-TO220-3-1
- Datasheets
- IPP80P04P4L06AKSA1
P-Channel Tube 6.7mOhm @ 80A, 10V +5V, -16V 6580pF @ 25V 104nC @ 10V 40V TO-220-3
IPP80P04P4L06AKSA1 Overview
A device's maximal input capacitance is 6580pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 61 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 10.8mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.By using -40V, it can supply the maximum voltage from two sources.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IPP80P04P4L06AKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 61 ns
single MOSFETs transistor is 10.8mOhm
a 40V drain to source voltage (Vdss)
IPP80P04P4L06AKSA1 Applications
There are a lot of Infineon Technologies
IPP80P04P4L06AKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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