IPP80N08S406AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

80A Tc

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Lead Free :

Contains Lead

Drain-source On Resistance-Max :

0.0058ohm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

320A

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 80A, 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Case Connection :

DRAIN

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

14 Weeks

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

150W Tc

Mounting Type :

Through Hole

Max Dual Supply Voltage :

80V

Avalanche Energy Rating (Eas) :

270 mJ

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 25V

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Terminal Position :

Single

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 90µA

Configuration :

SINGLE WITH BUILT-IN DIODE