IPP80N08S207AKSA1
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- Mfr.Part #
- IPP80N08S207AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 80A TO220-3
- Stock
- 5,600
- In Stock ：
- 5,600
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2006
- Turn-Off Delay Time :
- 61 ns
- Series :
- OptiMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Rise Time :
- 50ns
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Halogen Free :
- Halogen Free
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0074Ohm
- Number of Pins :
- 3
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 300W Tc
- Mounting Type :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 810 mJ
- JESD-609 Code :
- e3
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Packaging :
- Tube
- Fall Time (Typ) :
- 30 ns
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 7.4m Ω @ 80A, 10V
- Turn On Delay Time :
- 26 ns
- Continuous Drain Current (ID) :
- 80A
- Max Dual Supply Voltage :
- 75V
- Number of Terminations :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Datasheets
- IPP80N08S207AKSA1
N-Channel Tube 7.4m Ω @ 80A, 10V ±20V 4700pF @ 25V 180nC @ 10V TO-220-3
IPP80N08S207AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 61 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 26 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 75V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP80N08S207AKSA1 Features
the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 61 ns
IPP80N08S207AKSA1 Applications
There are a lot of Infineon Technologies
IPP80N08S207AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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