IPP80N06S4L07AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

5680pF @ 25V

Height :

15.65mm

Continuous Drain Current (ID) :

80A

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Weight :

6.000006g

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Turn On Delay Time :

10 ns

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

50 ns

Surface Mount :

No

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 80A, 10V

JEDEC-95 Code :

TO-220AB

Power Dissipation-Max :

79W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-220-3

Width :

4.4mm

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.2V @ 40μA

Length :

10mm

Number of Elements :

1

Halogen Free :

Halogen Free

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Number of Pins :

3

Series :

Automotive, AEC-Q101, OptiMOS™

Vgs (Max) :

±16V

Max Dual Supply Voltage :

60V

JESD-609 Code :

e3

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Published :

2006

Drain-source On Resistance-Max :

0.0064Ohm