IPP80N06S4L05AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

107W Tc

Packaging :

Tube

Reach Compliance Code :

Compliant

DS Breakdown Voltage-Min :

60V

Vgs (Max) :

±16V

Published :

2009

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 80A, 10V

Pulsed Drain Current-Max (IDM) :

320A

Drain Current-Max (Abs) (ID) :

80A

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

No

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0048Ohm

Series :

OptiMOS™

Input Capacitance (Ciss) (Max) @ Vds :

8180pF @ 25V

Avalanche Energy Rating (Eas) :

152 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 60μA

Mounting Type :

Through Hole

JESD-30 Code :

R-PSFM-T3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Case Connection :

DRAIN