IPP80N06S407AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 40μA

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Series :

Automotive, AEC-Q101, OptiMOS™

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

15 ns

Power Dissipation-Max :

79W Tc

Max Dual Supply Voltage :

60V

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

7.4m Ω @ 80A, 10V

Rise Time :

3ns

Mount :

Through Hole

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

FET Type :

N-Channel

Fall Time (Typ) :

5 ns

Package / Case :

TO-220-3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

80A

Number of Pins :

3

Drain-source On Resistance-Max :

0.0071Ohm

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Turn-Off Delay Time :

23 ns

Published :

2006

Packaging :

Tube

Terminal Position :

Single

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Avalanche Energy Rating (Eas) :

71 mJ